Author Affiliations
Abstract
1 College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
2 Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
3 Key Laboratory of Transparent and Opto-functional Inorganic Materials, Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
4 School of Physics and Astronomy, Yunnan University, Kunming 650091, China
The anisotropy of thermal property in an crystal is investigated from the temperature of 293 to 573 K. Based on the systematical study of thermal expansion, thermal diffusivity, and specific heat, the thermal conductivity in crystals orientated at (100), (010), (001), and (406) is calculated to be 3.46, 2.60, 3.35, and , respectively. The laser output anisotropy of a continuous-wave (CW) and tunable laser is characterized, accordingly. A maximum output power of 6.09 W is achieved in the crystal with (010) direction, corresponding to a slope efficiency of 48.56%. The tuning wavelength range in the crystal orientated at (100), (010), and (001) is 68, 67, and 65 nm, separately. The effects of thermal properties on CW laser performance are discussed.
anisotropy thermal property tunable laser Yb,Nd:Sc2SiO5 crystal Chinese Optics Letters
2021, 19(4): 041405
1 中国科学院大学 微电子学院, 北京 100029
2 中芯国际集成电路制造有限公司, 天津 300385
提出一种改善n型横向双扩散金属氧化物半导体(NLDMOS)器件性能的工艺方法。该方法基于某公司0.18μm标准工艺流程, 通过在NLDMOS的共源处增加一道离子注入, 引出衬底电荷, 以优化NLDMOS器件的击穿电压（Vb）与比导通电阻（Rsp）。选择不同的注入离子浓度与快速热退火时间, 研究了器件的Vb与Rsp变化。由于离子激活效率不足, 单纯增加20%的注入离子浓度, 器件的耐压性能提升极小, 采用增加20%注入离子浓度结合延长20s快速热退火时间的方法, NLDMOS器件的Vb提高约2.7%, 同时Rsp仅增加0.9%左右。
击穿电压 比导通电阻 离子注入 快速热退火 NLDMOS NLDMOS breakdown voltage Rsp ion implant RTA
Author Affiliations
Abstract
1 College of Electrical Engineering and Automation, Shandong University of Science and Technology, Qingdao 266590, China
2 College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
With a Nd:ScYSiO5 crystal, a high peak power electro-optically Q-switched 1.0 μm laser and tri-wavelength laser operations at the 1.3 μm band are both investigated. With a rubidium titanyle phosphate (RTP) electro-optical switcher and a polarization beam splitter, a high signal-to-noise ratio 1.0 μm laser is obtained, generating a shortest pulse width of 30 ns, a highest pulse energy of 0.765 mJ, and a maximum peak power of 25.5 kW, respectively. The laser mode at the highest laser energy level is the TEM00 mode with the M2 value in the X and Y directions to be Mx2 = 1.52 and My2 = 1.54. A tri-wavelength Nd:ScYSiO5 crystal laser at 1.3 μm is also investigated. A maximum tri-wavelength output power is 1.03 W under the absorbed pump power of 7 W, corresponding to a slope efficiency of 14.8%. The properties of the output wavelength are fully studied under different absorbed pump power.
140.3380 Laser materials 140.3540 Lasers, Q-switched Chinese Optics Letters
2019, 17(11): 111403
